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作者:邱子杰
作者(英文):ZIH-JIE CIOU
論文名稱:(HgTe)x /(Zn4Sb3)1-x複合材料熱電性能
論文名稱(英文):Thermoelectric properties of (HgTe)x / (Zn4Sb3)1-x composites
指導教授:吳慶成
黃士龍
指導教授(英文):Ching-Cherng Wu
Shyh-Lung Hwang
口試委員:蔡漢彰
黃士龍
吳慶成
口試委員(英文):Han-Chang Tsai
Shyh-Lung Hwang
Ching-Cherng Wu
學位類別:碩士
校院名稱:國立東華大學
系所名稱:材料科學與工程學系
學號:610822109
出版年(民國):109
畢業學年度:108
語文別:中文
論文頁數:86
關鍵詞:熱電材料直接淬火熱電優值
關鍵詞(英文):thermoelectric materialsdirect quenchingthe figure of merit
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本研究以直接焠火法分別由HgTe熔點之上(A製程,x=0-0.2,T=700°C)與之下(B製程,x=0.1-0.3,T=600°C)製備(HgTe)x/(Zn4Sb3)1-x複合物,並使用X-ray繞射、光學顯微鏡、場發射掃描式電子顯微鏡來分析各個複合物的相組成與微結構。實驗結果顯示A製程複合物之相組成為ZnSb + HgTe + HgZn3,x=0.1 B製程複合物之相組成為Zn4Sb3 + HgTe,而x=0.2與x=0.3 B製程複合物之相組成則為Zn4Sb3 + HgTe + HgZn3。本論文中在溫度60 K-300 K之間分析複合物之電阻率、席貝克係數與熱傳導率與溫度之相依性並計算其熱電優質ZT。
In this study, the (HgTe)x/(Zn4Sb3)1-x composites were prepared by direct quenching with two differen process (process A and process B). The quenching temperature of process A is above the melting point of HgTe, and the quenching temperature of process B is below the melting point of HgTe. The phase and stoichiometry for these composites were investigated by X-ray diffraction (XRD), metallographic microscope(OM) as well as field emission scanning electron microscope (FE-SEM). The experimental results show that the phases of composites prepared by process A are composed of ZnSb, HgTe, HgZn3. However, the phase of composites (x=0.1) prepared by process B are composed of Zn4Sb3 and HgTe, the phase of composites (x=0.2, x=0.3) prepared by process B are composed of Zn4Sb3, HgTe and HgZn3. Temperature dependence of resistivity, Seebeck coefficient and thermal conductivity for these composites were analyzed between 60 and 300 K. The dimensionless thermoelectric figure of merit ZT for these composites was evaluated and discussed.
致謝 I
摘要 II
英文摘要 III
第一章 前言與文獻回顧 1
1.1 研究背景 1
1.2 研究動機 5
1.3 銻化鋅系列熱電材料文獻回顧 5
第二章 熱電基礎理論 7
2.1 熱電理論 7
2.1.1 Seebeck效應 7
2.1.2 Peltier 效應 8
2.1.3 Thomson 效應 9
2.2 熱電材料物理性質 10
2.2.1 電阻率 10
2.2.2 Seebeck 係數 11
2.2.3 熱傳導現象 12
2.2.3.1 電子對熱傳導的影響 13
2.2.3.2 聲子對熱傳導的影響 14
第三章 實驗方法與步驟 19
3.1 實驗方法 19
3.1.1實驗流程圖(A製程) 22
3.1.2實驗流程圖(B製程) 23
3.2 實驗步驟 24
3.2.1 石英管之前處理 24
3.2.2 元素秤重及封管 25
3.2.3 高溫搖擺及直接淬火(Direct Quench) 26
3.3 樣品製備及量測 28
3.3.1 電阻率樣品製作及量測 28
3.3.2 熱傳導率和Seebeck係數樣品製作及量測 29
3.4 顯微結構與成分分析 31
3.4.1 XRD(X-ray diffractometer) 31
3.4.2 場發射型掃描式電子顯微鏡(FE-SEM) 32
3.4.3 熱電量測系統及控制程式 32
第四章 實驗結果與討論 37
4.1 顯微結構與成分分析 37
4.1.1光學顯微鏡分析 37
4.1.2 XRD分析 56
4.1.3 FE-SEM分析 61
4.2 熱電性質量測分析 71
4.2.1電阻率 71
4.2.2 Seebeck係數 73
4.2.3熱傳導率 76
4.2.4 ZT值 79
第五章 結論 81

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