奈米顆粒薄膜的電荷傳輸性質主要透過穿隧的方式來進行，又因庫倫阻斷效應使電荷必須克服奈米顆粒的充電能。一維、二維奈米顆粒薄膜結構的集體電荷傳輸可視為一系列的穿隧效應與庫倫阻斷效應，其電流會隨電壓呈現冪次關係。文獻上較少針對薄膜寬度變化對傳輸特性做系統性的討論。本研究製作出不同寬度之金奈米顆粒薄膜並討論其傳輸特性之不同。
溫度於10 K時，不同寬度薄膜的電流-電壓(I-V)曲線有著相似的行為，可以明顯地觀察到庫倫阻斷區間。利用Arrhenius方程式分析與電阻隨溫度的變化，發現不同的樣品具有相似的充電能Ec~13 meV。由Middleton-Wingreen模型：I~(Vbias/Vt-1)^ζ，可估計臨界電壓及傳輸路徑的維度與薄膜寬度的關係。發現隨著薄膜寬度從200 nm增加至2.3 μm，α值從0.4減少至0.11，顯示在較寬的通道在路徑的選擇上較多，而較窄的則反之；其ζ值從2.5增加至3.7，表示在相同的電壓增量下將會有較多的電流通道被開啟，其傳輸網路有更多的蜿蜒與分歧。

The charge transport properties of nanoparticle films are mainly carried out through tunneling, and the charge must overcome the charging energy of nanoparticle due to the Coulomb blocking effect. The collective charge transfer of one-dimensional and two-dimensional nanoparticle film structures can be regarded as a series of tunneling and coulomb blocking effects, and its current-voltage(I-V) MW model could be described to I~(Vbias/Vt-1)^ζ. Rare literature discusses the charge transport influenced by the width of nanoparticle film. In this study, gold nanoparticle films with different widths were produced and the difference in transport characteristics was discussed. When the temperature is 10 K the Coulomb blockade regime can be clearly observed. The Arrhenius equation is used to analyze the temperature dependence of the zero bias resistance, and it is found that different samples have similar charging energy Ec~13 meV. The MW model to show the relationship between the threshold voltage and the dimension of the current path, Our results show that the threshold voltage will decrease as the film width increases, and the dimension of the current path will increase as the film width increases. It is presumed that the wider sample has more more transverse paths, and more winding branching network.

致謝 i
摘要 ii
Abstract iii
目錄 iv
圖目錄 vi
表目錄 vii
第一章 緒論 1
第二章 原理與文獻回顧 3
2.1單電子效應簡介 3
2.1.1單電子效應形成條件 4
2.1.2單電子效應相關文獻 8
2.2金屬奈米顆粒陣列之電荷傳輸 9
2.2.1 MW模型基本假設 9
2.2.2一維與二維奈米顆粒陣列電荷傳輸情形 11
2.2.3實驗分析金屬奈顆粒陣列的電荷傳輸 14
2.3研究動機 18
第三章 樣品製備 19
3.1金奈米顆粒製備 19
3.2金奈米顆粒表面修飾與純化 24
3.3電極基板製備 27
3.3.1光學微影製程 27
3.3.2電子束微影製程 29
3.3.3電極基板修飾分子膜 30
3.4不同寬度之金奈米薄膜製作 31
3.5實驗儀器架設 34
第四章 實驗結果與討論 35
4.1金奈米顆粒薄膜表面形貌分析 35
4.2不同溫度下I-V量測 37
4.3金奈米顆粒薄膜擬合MW模型結果 42
4.3.1 臨界電壓Vt與薄膜寬度關係 42
4.3.2 ζ與薄膜寬度關係 45
4.3.3 實驗結果與文獻討論 47
第五章 結論 49
參考資料 50

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